*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 180 µA @ 1200 V |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 50 |
14,366
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
PSC10120KQ is a sic schottky diodes manufactured by Nexperia. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 10A, a voltage, forward (vf) (max) @ if of 1.8 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 112 Days from factory. Order PSC10120KQ from Simplytronix for authenticated stock and same-day order processing.
