| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Capacitance @ Vr, F | 340pF @ 1V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | 175°C |
| Packaging | |
| Standard Pack Qty | 8000 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100040 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
The PSC1065B1-QZ from Nexperia falls under the sic schottky diodes category. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 10A, a voltage, forward (vf) (max) @ if of 1.8 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 365 Days from factory. Order PSC1065B1-QZ from Simplytronix for authenticated stock and same-day order processing.