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PSC1065B1-QZ Nexperia
*For representation only.

PSC1065B1-QZ

Nexperia Discontinued
SiC Schottky Diodes PSC1065B1-Q/NAU000/U NCASED
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Capacitance @ Vr, F 340pF @ 1V, 1MHz
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature - Junction 175°C
📦 Product Attributes
Packaging
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,959
Units In Stock
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541100040
KRHTS 8541109000
TARIC 8541100000
ECCN EAR99
Product Overview

The PSC1065B1-QZ from Nexperia falls under the sic schottky diodes category. This component is defined by a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 10A, a voltage, forward (vf) (max) @ if of 1.8 V @ 10 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 365 Days from factory. Order PSC1065B1-QZ from Simplytronix for authenticated stock and same-day order processing.

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