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BUK7Y9R9-80EX Nexperia
*For representation only.

BUK7Y9R9-80EX

MOSFETs SOT669 N-CH 80V 89A
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 51.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4266 pF @ 25 V
FET Feature -
Power Dissipation (Max) 195W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,790
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by Nexperia, the BUK7Y9R9-80EX is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 89A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 9.9mOhm @ 25A, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order BUK7Y9R9-80EX from Simplytronix for authenticated stock and same-day order processing.

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