*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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Product Attributes
| Packaging | Ammo Pack |
| Standard Pack Qty | 2000 |
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Alternate / Replacement Parts
| Alternate Packaging | TN0106N3-G |
| Suggested Replacement |
8,758
Units In Stock
📦 Ammo Pack
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541900000 |
| USHTS | 8541290065 |
| JPHTS | 8542900006 |
| TARIC | 8541900000 |
| MXHTS | 8541900299 |
| ECCN | EAR99 |
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Product Overview
TN0106N3-G-P013 is a mosfets manufactured by Microchip Technology. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 350mA (Tj), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 3Ohm @ 500mA, 10V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. You can source TN0106N3-G-P013 through Simplytronix, with fast shipping and verified authenticity.
