*For representation only.
MSC045SMB120SDT/RM
Microchip Technology
Active
SiC MOSFETs MOSFET SIC 1200 V 45 mOhm TO-263-7 XL Mini Reel
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Vgs (Max) | 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 237W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 100 |
9,304
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 98 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
MSC045SMB120SDT/RM is a sic mosfets manufactured by Microchip Technology. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 49A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 60mOhm @ 10A, 18V. This part has a typical lead time of 98 Days from factory. Order MSC045SMB120SDT/RM from Simplytronix for authenticated stock and same-day order processing.
