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APT80GA90B Microchip Technology
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APT80GA90B

IGBTs IGBT PT MOS 8 Single 900 V 80 A TO-247
Technical Specifications
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 145 A
Current - Collector Pulsed (Icm) 239 A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Power - Max 625 W
Switching Energy 1652µJ (on), 1389µJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C 18ns/149ns
Test Condition 600V, 47A, 4.7Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,597
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 13 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Microchip Technology's APT80GA90B is a widely used igbts in electronic designs. Key specifications include a IGBT type of PT, a voltage, collector emitter breakdown of 900 V, a current, collector (ic) of 145 A, a current, collector pulsed of 239 A, a vce(on) (max) @ vge, ic of 3.1V @ 15V, 47A and a power, max of 625 W. This part has a typical lead time of 13 Days from factory and ships with a full manufacturer datasheet available for download. You can source APT80GA90B through Simplytronix, with fast shipping and verified authenticity.

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