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APT50GP60B2DQ2G

IGBTs IGBT PT MOS 7 Combi 600 V 50 A TO-247 MAX
Technical Specifications
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 150 A
Current - Collector Pulsed (Icm) 190 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Power - Max 625 W
Switching Energy 465µJ (on), 635µJ (off)
Input Type Standard
Gate Charge 165 nC
Td (on/off) @ 25°C 19ns/85ns
Test Condition 400V, 50A, 4.3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,533
Units In Stock
📦 Tube
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🔑 Key Specifications
Category IGBTs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by Microchip Technology, the APT50GP60B2DQ2G is classified as an igbts. Key specifications include a IGBT type of PT, a voltage, collector emitter breakdown of 600 V, a current, collector (ic) of 150 A, a current, collector pulsed of 190 A, a vce(on) (max) @ vge, ic of 2.7V @ 15V, 50A and a power, max of 625 W. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks APT50GP60B2DQ2G for same-day shipping with genuine parts guaranteed.

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