*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1000 |
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Alternate / Replacement Parts
| Alternate Packaging | 2N7000-G P002 |
| Suggested Replacement |
13,586
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 49 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
Microchip Technology's 2N7000-G is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 200mA (Tj), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 5Ohm @ 500mA, 10V. This part has a typical lead time of 49 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N7000-G for same-day shipping with genuine parts guaranteed.
