*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 800 mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/368 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1 |
8,992
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 350 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
Microchip / Microsemi's JANTXV2N3439 is a widely used transistors in electronic designs. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 350 V, a vce saturation (max) @ ib, ic of 500mV @ 4mA, 50mA, a current, collector cutoff of 2µA and a DC current gain (hfe) (min) @ ic, vce of 40 @ 20mA, 10V. This part has a typical lead time of 350 Days from factory and ships with a full manufacturer datasheet available for download. Order JANTXV2N3439 from Simplytronix for authenticated stock and same-day order processing.
