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JANTXV2N5153U3

Bipolar Transistors - BJT 80V 2A 1W PNP Low Profile CER Power BJT SMT
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2.5A, 5V
Power - Max 1.16 W
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/545
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Supplier Device Package U3
📦 Product Attributes
Packaging Tray
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,528
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 350 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541210000
MXHTS 85412999
ECCN EAR99
Product Overview

The JANTXV2N5153U3 from Microchip / Microsemi falls under the transistors category. This component is defined by a transistor type of PNP, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 1.5V @ 500mA, 5A, a current, collector cutoff of 1mA and a DC current gain (hfe) (min) @ ic, vce of 70 @ 2.5A, 5V. This part has a typical lead time of 350 Days from factory and ships with a full manufacturer datasheet available for download. Order JANTXV2N5153U3 from Simplytronix for authenticated stock and same-day order processing.

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