Similar Products
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The IXFN27N120SK from IXYS falls under the sic mosfets category. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order IXFN27N120SK from Simplytronix for authenticated stock and same-day order processing.
