*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.5V @ 9mA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 18 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 800 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 450 |
12,497
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
IXYS's IXSH65N120L2KHV is a widely used sic mosfets in electronic designs. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 65A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 52mOhm @ 20A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Order IXSH65N120L2KHV from Simplytronix for authenticated stock and same-day order processing.
