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IS43TR85120B-125KBL

ISSI Active
DRAM 4G, 1.5V, DDR3, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (8mm x10.5mm) RoHS
Technical Specifications
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns
Access Time 20 ns
Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-TWBGA (8x10.5)
Product Attributes
Packaging
Standard Pack Qty242
Alternate / Replacement Parts
Alternate Packaging IS43TR85120B-125KBL-TR
Suggested Replacement
10,672
In Stock
Packaging:
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 280 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8542320020
USHTS 8542320036
MXHTS 8542320299
ECCN EAR99
Product Overview

IS43TR85120B-125KBL by ISSI is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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