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IS66WVQ16M4FBLL-200BLI

ISSI Active
DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS
Technical Specifications
Memory Type Volatile
Memory Format PSRAM
Technology PSRAM (Pseudo SRAM)
Memory Size 64Mbit
Memory Organization 16M x 4
Memory Interface SPI - Quad I/O
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 35ns
Access Time 6.5 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-TFBGA (6x8)
Product Attributes
Packaging
Standard Pack Qty480
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,543
In Stock
Packaging:
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 196 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8542320020
USHTS 8542320002
MXHTS 8542320299
ECCN 3A991.b.2.a
Product Overview

IS66WVQ16M4FBLL-200BLI by ISSI is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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