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IMYR140R029M2HXLSA1 Infineon Technologies
*For representation only.

IMYR140R029M2HXLSA1

SiC MOSFETs SIC DISCRETE
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1400 V
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 29mOhm @ 27.3A, 18V
Vgs(th) (Max) @ Id 5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1960 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 288W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-18
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,439
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IMYR140R029M2HXLSA1 from Infineon Technologies falls under the sic mosfets category. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1400 V, a current, continuous drain (id) @ 25°C of 71A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 29mOhm @ 27.3A, 18V. This part has a typical lead time of 315 Days from factory. Simplytronix carries IMYR140R029M2HXLSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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