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IMY120R036CM2HXKSA1 Infineon Technologies
*For representation only.

IMY120R036CM2HXKSA1

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 45mOhm @ 18.2A, 18V
Vgs(th) (Max) @ Id 5.1V @ 5.7mA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 18 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 800 V
FET Feature -
Power Dissipation (Max) 171W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-19
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,135
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IMY120R036CM2HXKSA1 from Infineon Technologies falls under the sic mosfets category. This component is defined by a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 44A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 45mOhm @ 18.2A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IMY120R036CM2HXKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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