*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Vgs (Max) | +20V, -2V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | IMW65R075M2HXKSA |
8,620
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's IMW65R083M1HXKSA1 is a widely used sic mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 24A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 111mOhm @ 11.2A, 18V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IMW65R083M1HXKSA1 for same-day shipping with genuine parts guaranteed.
