| Technology | SiCFET (Silicon Carbide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 27A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 800V |
| Power - Max | 410W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad |
| Supplier Device Package | PG-HDSOP-16-221 |
| Packaging | Reel |
| Standard Pack Qty | 750 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The IMSQ120R026M2HHXUMA1 from Infineon Technologies falls under the sic mosfets category. Key specifications include a technology of SiCFET (Silicon Carbide), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 83A (Tc) and a rds on (max) @ id, vgs of 26mOhm @ 27A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IMSQ120R026M2HHXUMA1 in stock, backed by a genuine parts guarantee and quick dispatch.