*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | IMBG65R050M2HXTM |
9,812
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
IMBG65R048M1HXTMA1 is a sic mosfets manufactured by Infineon Technologies. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 45A (Tc), a drive voltage of 18V and a rds on (max) @ id, vgs of 64mOhm @ 20.1A, 18V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IMBG65R048M1HXTMA1 for same-day shipping with genuine parts guaranteed.
