*For representation only.
IMBG120R030M1HXTMA1
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 11.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Vgs (Max) | +18V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
13,435
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IMBG120R030M1HXTMA1 is classified as a sic mosfets. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 56A (Tc), a rds on (max) @ id, vgs of 41mOhm @ 25A, 18V and a vgs(th) (max) @ id of 5.7V @ 11.5mA. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IMBG120R030M1HXTMA1 for same-day shipping with genuine parts guaranteed.
