*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 13A |
| Vgs(th) (Max) @ Id | 1.6V @ 4.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 3 V |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8 |
| Package / Case | 8-PowerSFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
8,689
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
IGT65R035D2ATMA1 is a gan fets manufactured by Infineon Technologies. Key specifications include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 49A (Tc), a drive voltage of - and a rds on (max) @ id, vgs of 42mOhm @ 13A. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IGT65R035D2ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.
