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IGC037S12S1XTMA1 Infineon Technologies
*For representation only.

IGC037S12S1XTMA1

GaN FETs CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 18A, 5V
Vgs(th) (Max) @ Id 2.9V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) ±6.5V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 60 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta), 45W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TSON-6-2
Package / Case 6-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,670
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IGC037S12S1XTMA1 from Infineon Technologies falls under the gan fets category. Notable characteristics of this part include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 120 V, a current, continuous drain (id) @ 25°C of 19A (Ta), 71A (Tc), a drive voltage of 5V and a rds on (max) @ id, vgs of 3.7mOhm @ 18A, 5V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IGC037S12S1XTMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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