*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3.1A |
| Vgs(th) (Max) @ Id | 1.6V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 3 V |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | PG-TSON-8-U06 |
| Package / Case | 8-TDFN Exposed Pad |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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In Stock
Packaging: Reel
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 126 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Product Overview
IGL65R140D2XUMA1 by Infineon Technologies is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
