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IGI65D1414A3MSXUMA1

GaN FETs Two 140 mohm / 650 V GaN transistors in half-bridge configuration
Technical Specifications
Output Configuration Half Bridge
Applications AC Motors, DC Motors, DC-DC Converters, General Purpose
Load Type Inductive, Capacitive, Resistive
Technology NMOS
Rds On (Typ) 140mOhm
Voltage - Load 650V (Max)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 32-PowerTQFN
Supplier Device Package PG-TIQFN-32-1
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,292
In Stock
Packaging: Reel
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryGaN FETs
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 126 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
USHTS 8542390090
MXHTS 8542399999
ECCN EAR99
Product Overview

IGI65D1414A3MSXUMA1 by Infineon Technologies is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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