*For representation only.
IGB110S10S1XTMA1
Infineon Technologies
Active
GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 5V |
| Vgs(th) (Max) @ Id | 2.9V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 5 V |
| Vgs (Max) | ±6.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 15W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSON-4-2 |
| Package / Case | 4-PowerTDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
9,547
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
IGB110S10S1XTMA1 is a gan fets manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 9A (Ta), 23A (Tc), a drive voltage of 5V and a rds on (max) @ id, vgs of 11mOhm @ 10A, 5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IGB110S10S1XTMA1 for same-day shipping with genuine parts guaranteed.
