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IDV08E65D2XKSA1

Small Signal Switching Diodes IGBT PRODUCTS
Technical Specifications
Technology Standard
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 2.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 40 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Capacitance @ Vr, F -
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package PG-TO220-2 Full Pack
Operating Temperature - Junction -40°C ~ 175°C
Product Attributes
Packaging Tube
Standard Pack Qty500
Alternate / Replacement Parts
Alternate Packaging IDV08E65D2
Suggested Replacement
7,103
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySmall Signal Switching Diodes
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 19 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541100000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

IDV08E65D2XKSA1 by Infineon Technologies is a small signal switching diodes designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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