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IDK02G120C5XTMA1 Infineon Technologies
*For representation only.

IDK02G120C5XTMA1

SiC Schottky Diodes SIC DISCRETE
Technical Specifications
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 11.8A
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 2 A
Speed Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 18 µA @ 1200 V
Capacitance @ Vr, F 182pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2-1
Operating Temperature - Junction -55°C ~ 175°C
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,551
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541100000
USHTS 8541100080
ECCN EAR99
Product Overview

IDK02G120C5XTMA1 is a sic schottky diodes manufactured by Infineon Technologies. Key specifications include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified of 11.8A, a voltage, forward (vf) (max) @ if of 1.65 V @ 2 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. You can source IDK02G120C5XTMA1 through Simplytronix, with fast shipping and verified authenticity.

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