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FZ750R65KE3P2NOSA1 Infineon Technologies
*For representation only.

FZ750R65KE3P2NOSA1

IGBT Modules IHV IHM T
Technical Specifications
IGBT Type Trench Field Stop
Configuration Single Switch
Voltage - Collector Emitter Breakdown (Max) 6500 V
Current - Collector (Ic) (Max) 750 A
Power - Max 3000000 W
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 750A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 205000 pF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -50°C ~ 125°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package A-IHV190-6
📦 Product Attributes
Packaging Tray
Standard Pack Qty 2
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,529
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS No
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

FZ750R65KE3P2NOSA1 is an igbt modules manufactured by Infineon Technologies. It features a IGBT type of Trench Field Stop, a configuration of Single Switch, a voltage, collector emitter breakdown of 6500 V, a current, collector (ic) of 750 A, a power, max of 3000000 W and a vce(on) (max) @ vge, ic of 3.4V @ 15V, 750A. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Order FZ750R65KE3P2NOSA1 from Simplytronix for authenticated stock and same-day order processing.

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