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FF800R12KE7EHPSA1 Infineon Technologies
*For representation only.

FF800R12KE7EHPSA1

IGBT Modules 1200 V, 800 A common emitter IGBT module
Technical Specifications
IGBT Type Trench Field Stop
Configuration Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 800 A
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 800A
Current - Collector Cutoff (Max) 100 µA
Input Capacitance (Cies) @ Vce 122 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-62MMHB
📦 Product Attributes
Packaging Tray
Standard Pack Qty 10
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,612
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the FF800R12KE7EHPSA1 is classified as an igbt modules. Notable characteristics of this part include a IGBT type of Trench Field Stop, a configuration of Half Bridge Inverter, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 800 A, a vce(on) (max) @ vge, ic of 1.75V @ 15V, 800A and a current, collector cutoff of 100 µA. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks FF800R12KE7EHPSA1 for same-day shipping with genuine parts guaranteed.

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