| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (Three Phase Inverter) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 260A |
| Rds On (Max) @ Id, Vgs | 4.67mOhm @ 260A, 18V |
| Vgs(th) (Max) @ Id | 4.55V @ 100mA |
| Gate Charge (Qg) (Max) @ Vgs | 720nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 750V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 185°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Tray |
| Standard Pack Qty | 6 |
| Category | IGBT Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 273 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the FS03M1R12A7MA2BHPSA1 is classified as an igbt modules. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (Three Phase Inverter), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 260A and a rds on (max) @ id, vgs of 4.67mOhm @ 260A, 18V. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries FS03M1R12A7MA2BHPSA1 in stock, backed by a genuine parts guarantee and quick dispatch.