| IGBT Type | Trench Field Stop |
| Configuration | Half Bridge Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 890 A |
| Power - Max | 20 mW |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 900A |
| Current - Collector Cutoff (Max) | 100 µA |
| Input Capacitance (Cies) @ Vce | 122000 pF @ 25 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
| Packaging | Tray |
| Standard Pack Qty | 6 |
| Category | IGBT Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The FF900R12ME7WBPSA1 from Infineon Technologies falls under the igbt modules category. It features a IGBT type of Trench Field Stop, a configuration of Half Bridge Inverter, a voltage, collector emitter breakdown of 1200 V, a current, collector (ic) of 890 A, a power, max of 20 mW and a vce(on) (max) @ vge, ic of 1.8V @ 15V, 900A. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF900R12ME7WBPSA1 through Simplytronix, with fast shipping and verified authenticity.