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CY7C1021DV33-10BVXIT

SRAM 2Mb 10ns 3.3V 64Kx16 Fast Async SRAM
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 1Mbit
Memory Organization 64K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Product Attributes
Packaging Reel
Standard Pack Qty2000
Alternate / Replacement Parts
Alternate Packaging CY7C1021DV33-10BVXI
Suggested Replacement CY7C1041G3010BVI
3,743
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySRAM
RoHSRoHS Compliant
LifecycleEnd of Life
Reported Lead Time 182 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329000
CAHTS 8542320041
USHTS 8542320041
JPHTS 8542320290
KRHTS 8542311000
TARIC 8542324500
MXHTS 8542320299
ECCN 3A991.b.2.b
Product Overview

CY7C1021DV33-10BVXIT by Infineon Technologies is a sram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.