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BGAP2S20AE6327XTSA1 Infineon Technologies
*For representation only.

BGAP2S20AE6327XTSA1

RF Amplifier WIRELESS INFRASTRUCTURE
Technical Specifications
Frequency 2.3GHz ~ 2.7GHz
P1dB 28.9dBm
Gain 34.8dB
Noise Figure 3.8dB
RF Type 4G, 5G
Voltage - Supply 4.75V ~ 5.25V
Current - Supply 121mA
Test Frequency 2.5GHz
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 16-WFDFN Exposed Pad
Supplier Device Package PG-TSNP-16-13
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,183
Units In Stock
📦 Reel
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  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category RF Amplifier
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8542330000
USHTS 8542330001
TARIC 8542330000
MXHTS 8542330299
ECCN 5A991.g
Product Overview

BGAP2S20AE6327XTSA1 is a rf amplifier manufactured by Infineon Technologies. Key specifications include a frequency of 2.3GHz ~ 2.7GHz, a p1db of 28.9dBm, a gain of 34.8dB, a noise figure of 3.8dB, a RF type of 4G, 5G and a voltage, supply of 4.75V ~ 5.25V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BGAP2S20AE6327XTSA1 for same-day shipping with genuine parts guaranteed.

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