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BGA7H1N6E6327XTSA1 Infineon Technologies
*For representation only.

BGA7H1N6E6327XTSA1

RF Amplifier RF SILICON MMIC
Technical Specifications
Frequency 2.3GHz ~ 2.69GHz
P1dB -8dBm
Gain 12.5dB
Noise Figure 0.6dB
RF Type LTE
Voltage - Supply 1.5V ~ 3.3V
Current - Supply 4.7mA
Test Frequency -
Mounting Type Surface Mount
Package / Case 6-XFDFN
Supplier Device Package PG-TSNP-6-2
📦 Product Attributes
Packaging Reel
Standard Pack Qty 15000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,037
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Amplifier
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542319090
CAHTS 8542330000
USHTS 8542330001
TARIC 8542330000
MXHTS 8542330201
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the BGA7H1N6E6327XTSA1 is classified as a rf amplifier. Key specifications include a frequency of 2.3GHz ~ 2.69GHz, a p1db of -8dBm, a gain of 12.5dB, a noise figure of 0.6dB, a RF type of LTE and a voltage, supply of 1.5V ~ 3.3V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source BGA7H1N6E6327XTSA1 through Simplytronix, with fast shipping and verified authenticity.

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