| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 840 V |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 126A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 27.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 5687 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 789W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-22-1 |
| Package / Case | 22-PowerBSOP Module |
| Packaging | Reel |
| Standard Pack Qty | 750 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's AIMDQ75R007M2HXTMA1 is a widely used sic mosfets in electronic designs. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 840 V, a current, continuous drain (id) @ 25°C of 220A (Tc), a drive voltage of 15V, 20V and a rds on (max) @ id, vgs of 6.3mOhm @ 126A, 20V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source AIMDQ75R007M2HXTMA1 through Simplytronix, with fast shipping and verified authenticity.