*For representation only.
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Technical Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Capacitance @ Vr, F | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -50°C ~ 175°C |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
8,709
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 56 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
The SIW30C065 from Diotec Semiconductor falls under the sic schottky diodes category. Notable characteristics of this part include a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 650 V, a current, average rectified of 30A, a voltage, forward (vf) (max) @ if of 1.8 V @ 30 A, a speed of Zero Recovery Time > 500mA (Io) and a reverse recovery time of 0 ns. This part has a typical lead time of 56 Days from factory. You can source SIW30C065 through Simplytronix, with fast shipping and verified authenticity.
