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SICW20C120 Diotec Semiconductor
*For representation only.

SICW20C120

SiC Schottky Diodes SiC Schottky Diode, TO-247-3L, 1200V, 20A
Technical Specifications
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Operating Temperature - Junction -50°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,644
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC Schottky Diodes
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541590000
CAHTS 8541100090
USHTS 8541100080
TARIC 8541100000
ECCN EAR99
Product Overview

Diotec Semiconductor's SICW20C120 is a widely used sic schottky diodes in electronic designs. This component is defined by a diode configuration of 1 Pair Common Cathode, a technology of SiC (Silicon Carbide) Schottky, a voltage, DC reverse (vr) of 1200 V, a current, average rectified (io) of 10A, a voltage, forward (vf) (max) @ if of 1.8 V @ 10 A and a speed of No Recovery Time > 500mA (Io). This part has a typical lead time of 84 Days from factory. Order SICW20C120 from Simplytronix for authenticated stock and same-day order processing.

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