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ZVN4206AVSTZ Diodes Incorporated
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ZVN4206AVSTZ

Diodes Incorporated Last Time Buy
MOSFETs Avalanche
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package E-Line (TO-92 compatible)
Package / Case E-Line-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,953
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

ZVN4206AVSTZ by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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