*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 130mV @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | 160MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,692
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Diodes Incorporated, the ZXT11N20DFTA is classified as a bipolar transistors - bjt. Key specifications include a transistor type of NPN, a current, collector (ic) of 2.5 A, a voltage, collector emitter breakdown of 20 V, a vce saturation (max) @ ib, ic of 130mV @ 250mA, 2.5A, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source ZXT11N20DFTA through Simplytronix, with fast shipping and verified authenticity.
