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FZT949QTA Diodes Incorporated
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FZT949QTA

Bipolar Transistors - BJT Pwr Low Sat Transistor SOT223 T&R 1K
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 5.5 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 440mV @ 500mA, 5.5A
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 1V
Power - Max 3 W
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,496
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
TARIC 8541210000
ECCN EAR99
Product Overview

FZT949QTA is a bipolar transistors - bjt manufactured by Diodes Incorporated. Notable characteristics of this part include a transistor type of PNP, a current, collector (ic) of 5.5 A, a voltage, collector emitter breakdown of 30 V, a vce saturation (max) @ ib, ic of 440mV @ 500mA, 5.5A, a current, collector cutoff of 50nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 1A, 1V. This part has a typical lead time of 280 Days from factory. You can source FZT949QTA through Simplytronix, with fast shipping and verified authenticity.

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