*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N and 2 P-Channel (Full Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A, 1.3A |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V, 233pF @ 30V |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223-8 |
| Supplier Device Package | SM8 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
13,137
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The ZXMHC6A07T8TA from Diodes Incorporated falls under the mosfets category. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N and 2 P-Channel (Full Bridge), a FET feature of Logic Level Gate, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 1.6A, 1.3A and a rds on (max) @ id, vgs of 300mOhm @ 1.8A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order ZXMHC6A07T8TA from Simplytronix for authenticated stock and same-day order processing.
