*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N and 2 P-Channel (Full Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.39A, 1.28A |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 166pF @ 40V, 141pF @ 50V |
| Power - Max | 870mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
8,341
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Diodes Incorporated, the ZXMHC6A07N8TC is classified as a mosfets. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N and 2 P-Channel (Full Bridge), a FET feature of Logic Level Gate, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 1.39A, 1.28A and a rds on (max) @ id, vgs of 250mOhm @ 1.8A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks ZXMHC6A07N8TC for same-day shipping with genuine parts guaranteed.
