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MMBF170Q-13-F

MOSFETs N-Ch Enh Mode FET 60Vdss 60Vdgr
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Product Attributes
Packaging Reel
Standard Pack Qty10000
Alternate / Replacement Parts
Alternate Packaging MMBF170Q-7-F
Suggested Replacement
9,814
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 280 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

MMBF170Q-13-F by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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