*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 200mA, 2V |
| Power - Max | 1.8 W |
| Frequency - Transition | 125MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-3 (Type B) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,445
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
DXTN10060DFJBQ-7 is a bipolar transistors - bjt manufactured by Diodes Incorporated. Key specifications include a transistor type of NPN, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 320mV @ 200mA, 4A, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 340 @ 200mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source DXTN10060DFJBQ-7 through Simplytronix, with fast shipping and verified authenticity.
