*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 869pF @ 30V |
| Power - Max | 1.9W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | V-DFN3030-8 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
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Alternate / Replacement Parts
| Alternate Packaging | DMT6018LDR-7 |
| Suggested Replacement |
10,057
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
DMT6018LDR-13 is a mosfets manufactured by Diodes Incorporated. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 8.8A (Ta) and a rds on (max) @ id, vgs of 17mOhm @ 8.2A, 10V. This part has a typical lead time of 168 Days from factory. Order DMT6018LDR-13 from Simplytronix for authenticated stock and same-day order processing.
