| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 65 V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 891 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Package / Case | 6-UDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | DMT6017LFDF-13 |
| Suggested Replacement |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
Diodes Incorporated's DMT6017LFDF-7 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 65 V, a current, continuous drain (id) @ 25°C of 8.1A (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 18mOhm @ 6A, 10V. This part has a typical lead time of 280 Days from factory. Simplytronix carries DMT6017LFDF-7 in stock, backed by a genuine parts guarantee and quick dispatch.