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DMT4008LFV-7 Diodes Incorporated
*For representation only.

DMT4008LFV-7

MOSFETs MOSFET BVDSS: 31V-40V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 12.1A (Ta), 54.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1179 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.9W (Ta), 35.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging DMT4008LFV-13
Suggested Replacement
4,765
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

DMT4008LFV-7 is a mosfets manufactured by Diodes Incorporated. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 12.1A (Ta), 54.8A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 7.9mOhm @ 12A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source DMT4008LFV-7 through Simplytronix, with fast shipping and verified authenticity.

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