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DMP2100UFU-13

MOSFETs Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.7A
Rds On (Max) @ Id, Vgs 38mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 906pF @ 10V
Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B)
Product Attributes
Packaging Reel
Standard Pack Qty10000
Alternate / Replacement Parts
Alternate Packaging DMP2100UFU-7
Suggested Replacement
10,701
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 84 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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MOSFETs Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W