| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-26 |
| Package / Case | SOT-23-6 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Manufactured by Diodes Incorporated, the DMN2100UDM-7 is classified as a mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 3.3A (Ta), a drive voltage of 1.5V, 4.5V and a rds on (max) @ id, vgs of 55mOhm @ 6A, 4.5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order DMN2100UDM-7 from Simplytronix for authenticated stock and same-day order processing.