*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 10V |
| Power - Max | 800mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Supplier Device Package | U-DFN2030-6 (Type B) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,933
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 84 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
DMN2014LHAB-7 is a mosfets manufactured by Diodes Incorporated. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual) Common Drain, a FET feature of Logic Level Gate, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 9A and a rds on (max) @ id, vgs of 13mOhm @ 4A, 4.5V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries DMN2014LHAB-7 in stock, backed by a genuine parts guarantee and quick dispatch.
